? 2008 ixys corporation, all rights reserved ds99922(09/08) v dss = 1000v i d25 = 10a r ds(on) 1.4 t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 25 a i a t c = 25 c5a e as t c = 25 c 500 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 380 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65/2.5..14.6 n/lb. weight to-247 6 g plus 220 types 4 g g = gate d = drain s = source tab = drain IXFH10N100P ixfv10n100p ixfv10n100ps preliminary technical information symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1.25 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1.4 polar tm power mosfet hiperfet tm features z international standard packages z fast recovery diode z avalanche rated z low package inductance advantages z easy to mount z space savings z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g s d (tab) plus220smd (ixfv_s) to-247 (ixfh) plus220 (ixfv) g d s d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFH10N100P ixfv10n100p ixfv10n100ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 4.2 6.5 s c iss 3030 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 200 pf c rss 34 pf r gi gate input resistance 1.8 t d(on) 38 ns t r 45 ns t d(off) 47 ns t f 75 ns q g(on) 56 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 19 nc q gd 30 nc r thjc 0.33 c /w r thcs (to-247 & plus220) 0.21 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 10 a i sm repetitive, pulse width limited by t jm 40 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns i rm 7.3 a preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 5a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p plus220 (ixfv) outline plus220smd (ixfv_s) outline
? 2008 ixys corporation, all rights reserved IXFH10N100P ixfv10n100p ixfv10n100ps fig. 1. output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 v ds - volts i d - amperes v gs = 15 v 10 v 7v 9v 8v fig. 2. extended output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 10v 9v 8v fig. 3. output characteristics @ 125oc 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 9v 7v 8v fig. 4. r ds(on) normalized to i d = 5a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 10a i d = 5a fig. 5. r ds(on) normalized to i d = 5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 024681012141618 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH10N100P ixfv10n100p ixfv10n100ps fig. 7. input admittance 0 1 2 3 4 5 6 7 8 9 10 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 2 4 6 8 10 12 14 012345678910 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 500v i d = 5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_10n100p (65)9-24-08
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